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| ZXMP62M832 MPPSTM Miniature Package Power Solutions DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY P-Channel V(BR)DSS = -20V; RDS(ON) = 0.6 ; ID= -1.0A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 30V N channel Trench MOSFET utilizes a unique structure combining the benefits of Low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Users will also gain several other key benefits: Performance capability equivalent to much larger packages Improved circuit efficiency & power levels PCB area and device placement savings Reduced component count 3mm x 2mm Dual Die MLP FEATURES * Low On - Resistance * Fast switching speed * Low threshold * Low gate drive * 3mm x 2mm MLP APPLICATIONS * DC-DC Converters * Power Management Functions * Disconnection switches * Motor Control D2 PINOUT 5 D2 6 D1 7 D1 8 ORDERING INFORMATION DEVICE ZXMP62M832TA REEL 7'` TAPE WIDTH 8mm QUANTITY PER REEL 3000 units G2 S2 G1 S1 4 3 2 1 3 x 2 Dual MLP underside view DEVICE MARKING DPA PROVISIONAL ISSUE A - MAY 2002 1 ZXMP62M832 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current@V GS =10V; T A =25 C (b)(f) @V GS =10V; T A =70 C (b)(f) @V GS =10V; T A =25 C (a)(f) Pulsed Drain Current Continuous Source Current (Body Diode)(b)(f) Pulsed Source Current (Body Diode) Power Dissipation at TA=25C (a)(f) Linear Derating Factor Power Dissipation at TA=25C (b)(f) Linear Derating Factor Power Dissipation at TA=25C (c)(f) Linear Derating Factor Power Dissipation at TA=25C (d)(f) Linear Derating Factor Power Dissipation at TA=25C (d)(g) Linear Derating Factor Power Dissipation at TA=25C (e)(g) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID P-Channel -20 12 -1.6 -1.3 -1.3 -5.6 -2.7 -5.6 1.5 12 2.45 19.6 1 8 1.13 8 1.7 13.6 3 24 -55 to +150 UNIT V V A A A A A A W mW/C W mW/C W mW/C W mW/C W mW/C W mW/C C I DM IS I SM PD PD PD PD PD PD T j :T stg THERMAL RESISTANCE PARAMETER Junction to Ambient (a)(f) Junction to Ambient (b)(f) Junction to Ambient (c)(f) Junction to Ambient (d)(f) Junction to Ambient (d)(g) Junction to Ambient (e)(g) Notes (a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only. (d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (f) For a dual device with one active die. (g) For dual device with 2 active die running at equal power. (h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph. (i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base if the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm wide tracks and one half of the device active is Rth = 250C/W giving a power rating of Ptot = 500mW. SYMBOL R JA R JA R JA R JA R JA R JA VALUE 83.3 51 125 111 73.5 41.7 UNIT C/W C/W C/W C/W C/W C/W PROVISIONAL ISSUE A - MAY 2002 2 ZXMP62M832 TYPICAL CHARACTERISTICS 10 3.5 Max Power Dissipation (W) ID Drain Current (A) RDS(ON) Limited 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 1oz Cu Note (d)(f) 2oz Cu Note (e)(g) 2oz Cu Note (a)(f) 1oz Cu Note (d)(g) 1 DC 1s 100ms 10ms 1ms 100us 100m 10m Note (a)(f) Single Pulse, Tamb=25C 1 10 25 50 75 100 125 150 VDS Drain-Source Voltage (V) Temperature (C) Safe Operating Area Thermal Resistance (C/W) Thermal Resistance (C/W) 80 60 D=0.5 Note (a)(f) Derating Curve 225 200 175 150 125 100 75 50 25 0 0.1 1oz copper Note (f) 1oz copper Note (g) 40 20 D=0.2 Single Pulse D=0.05 D=0.1 2oz copper Note (f) 2oz copper Note (g) 0 100 1m 10m 100m 1 10 100 1k 1 10 100 Pulse Width (s) Board Cu Area (sqcm) Transient Thermal Impedance 3.5 Tamb=25C 2oz copper Note (g) Thermal Resistance v Board Area PD Dissipation (W) 3.0 Tj max=150C 2.5 2.0 1.5 1.0 0.5 0.0 0.1 Continuous 2oz copper Note (f) 1oz copper Note (f) 1oz copper Note (g) 1 10 100 Board Cu Area (sqcm) Power Dissipation v Board Area PROVISIONAL ISSUE A - MAY 2002 3 ZXMP62M832 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage V (BR)DSS I DSS I GSS V GS(th) -0.7 0.6 0.9 0.56 -20 -1 100 V A nA V S I D =-250A, V GS =0V V DS =-20V, V GS =0V V GS = 12V, V DS =0V I =-250 A, V DS = V GS D SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Static Drain-Source On-State Resistance R DS(on) (1) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) NOTES (1) Measured under pulsed conditions. Width 300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. V GS =-4.5V, I D =-0.61A V GS =-2.7V, I D =-0.31A V DS =-10V,I D =-0.31A g fs C iss C oss C rss t d(on) tr t d(off) tf Qg Q gs Q gd V SD t rr Q rr 150 70 30 pF pF pF V DS =-15V, V GS =0V, f=1MHz 2.9 6.7 11.2 10.2 5.2 3.5 0.5 1.5 ns ns ns ns nC nC nC V DS =-16V,V GS =-4.5V, I D =-0.61A (Refer to test circuit) V DD =-10V, I D =-0.93A R G =6.0, R D=11 (Refer to test circuit) -0.95 14.9 5.6 V ns nC T J =25C, I S =-0.61A, V GS =0V T J =25C, I F =-0.61A, di/dt= 100A/s PROVISIONAL ISSUE A - MAY 2002 4 ZXMP62M832 TYPICAL CHARACTERISTICS PROVISIONAL ISSUE A - MAY 2002 5 ZXMP62M832 TYPICAL CHARACTERISTICS Basic Gate Charge Waveform Gate Charge Test Circuit Switching Time Waveforms Switching Time Test Circuit PROVISIONAL ISSUE A - MAY 2002 6 ZXMP62M832 MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package) CONTROLLING DIMENSIONS IN MILLIMETRES APPROX. CONVERTED DIMENSIONS IN INCHES MLP832 PACKAGE DIMENSIONS MILLIMETRES DIM A A1 A2 A3 b b1 D D2 D3 MIN. 0.80 0.00 0.65 0.15 0.24 0.17 MAX. 1.00 0.05 0.75 0.25 0.34 0.30 INCHES MIN. 0.031 0.00 0.0255 0.006 0.009 0.0066 MAX. 0.039 0.002 0.0295 0.0098 0.013 0.0118 DIM e E E2 E4 L L2 MILLIMETRES MIN. MAX. INCHES MIN. MAX. 0.65 REF 2.00 BSC 0.43 0.16 0.20 0.63 0.36 0.45 0.125 0.075 BSC 0 12 0.0787 BSC 0.0256 BSC 0.017 0.006 0.0078 0.00 0.0249 0.014 0.0157 0.005 3.00 BSC 0.82 1.01 1.02 1.21 0.118 BSC 0.032 0.0397 0.040 0.0476 0.0029 BSC 0 12 (c) Zetex plc 2002 Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4422 Fax: (44) 161 622 4420 Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY11788 USA Telephone: (631) 360 2222 Fax: (631) 360 8222 Zetex (Asia) Ltd 3701-04 Metroplaza, Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com PROVISIONAL ISSUE A - MAY 2002 7 |
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